- 描述
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描述
描述
NbN thin films have been a hot spot in the field of superconducting electronics in recent decades due to their high critical transition temperature, high energy gap and high upper critical field.
have been successfully applied to the development of high performance SNSPD devices. In the NbN-SNSPD of 1550 nm band, the detection efficiency of the system exceeds 90% at 2.1 K working temperature, reaching the best level in the world. Based on high-performance and high-uniformity thin films, the preparation of small-scale industrialized SNSPD devices has been realized. The successful application of high-performance SNSPD devices in the field of quantum information also proves the excellent performance of NbN/NbTiN superconducting thin film materials from the perspective of application. |
film thickness 150nm, 1*1 um2 range: Rq = 0.45nm
growth method | reactive magnetron sputtering | |
substrate material | MgO(100) | SiO2/Si(100) |
film thickness | 2-500 nm: ±5% | |
film thickness uniformity | 4 inch: ± 5% | |
film structure | epitaxial film, fcc,a = 4.46 Å | polycrystalline film |
surface roughness | < 0.5 nm RMS | < 2 nm RMS |
superconducting transition temperature | > 16 K @ 200 nm | > 15 K @ 200 nm |
> 8 K @ 3 nm | > 6 K @ 7 nm | |
film resistivity | < 100 μΩ cm @ 200 nm | < 300 μΩ cm @ 200 nm |
< 500 μΩ cm @ 3 nm | < 600 μΩ cm @ 7 nm | |
General size | 5×5×0.4 mm-50×50×0.4 mm | dia 4″×0.625mm |
Note: Films of different thicknesses, substrates of special sizes and directions can be provided according to customer requirements.
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